q?v~zy??q?v?_ra]u??qcabaq HFP10N80 bv dss = 800 v r ds(on) typ
i d = 9.4 a ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 58 nc (typ.) ? extended safe operating area ? lower r ds(on)
7 \ s # 9 gs =10v ? 100% avalanche tested thermal resistance characteristics features absolute maximum ratings t c =25 e unless otherwise specified HFP10N80 800v n-channel mosfet symbol parameter value units v dss drain-source voltage 800 v i d drain current ? continuous (t c = 25 zq 9.4 a drain current ? continuous (t c = 100 zq 5.9 a i dm drain current ? pulsed (note 1) 36.0 a v gs gate-source voltage daq v e as single pulsed avalanche energy (note 2) 920 mj i ar avalanche current (note 1) 9.4 a e ar repetitive avalanche energy (note 1) 19.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 zq qqqqqqqqqqqqqqqqqqqqqqqqqqq^qu???q????qcf q 195 w 1.56 w/ q t j , t stg operating and storage temperature range -55 to +150 q t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 q dec 2010 symbol parameter typ. max. units r jc junction-to-case -- 0.64 `?q r cs case-to-sink 0.5 -- r ja junction-to-ambient -- 62.5 2 1 3 to-220 1.gate 2. drain 3. source
q?v~zy??q?v?_ra]u??qcabaq HFP10N80 notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=17.3mh, i as =10.0a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ g l g w ? $ v 9 dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & \ f o h ? 5. essentially independent of operating temperature electrical characteristics t c =25 q c unless otherwise specified i s continuous source-drain diode forward current -- -- 9.4 a i sm pulsed source-drain diode forward current -- -- 36.0 v sd source-drain diode forward voltage i s = 9.4 a, v gs = 0 v -- -- 1.4 v trr reverse recovery time i s = 9.4 a, v gs = 0 v di f /dt = 100 a/ v (note 4) -- 950 -- q qrr reverse recovery charge -- 14.0 -- & symbol parameter test conditions min typ max units v gs gate threshold voltage v ds = v gs , i d = 250 3q 2.5 -- 4.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 4.7 a q -- 0.92 1.15 q on characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3q 800 -- -- v ) bv dss / ) t j breakdown voltage temperature coefficient i d = 250 3]q?????????q?cf q -- 0.99 -- ?` q i dss zero gate voltage drain current v ds = 800 v, v gs = 0 v q -- -- 1 3q v ds = 640 v, t c = 125 q -- -- 10 3q i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 2q i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 2q off characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz q -- 2800 3600 ?q c oss output capacitance -- 230 300 ?q c rss reverse transfer capacitance -- 20 25 ?q dynamic characteristics t d(on) turn-on time v ds = 400 v, i d = 9.4 a, r g = 25 q q qqqqqqqqqqqqqqqqqqqqqqqqqqqq y??qe]fzq -- 60 120 q t r turn-on rise time -- 150 300 q t d(off) turn-off delay time -- 120 240 q t f turn-off fall time -- 120 240 q q g total gate charge v ds = 640v, i d = 9.4 a, v gs = 10 v y??qe]fzq -- 58 75 ?tq q gs gate-source charge -- 17.5 -- ?tq q gd gate-drain charge -- 22 -- ?tq switching characteristics source-drain diode maximum ratings and characteristics
q?v~zy??q?v?_ra]u??qcabaq HFP10N80 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 3500 4000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd b >>?? ?? >>? 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v b >>?? ?? >>? v 3 x o v h 7 h v w 2. t c = 25 b] i d , drain current [a] v ds , drain-source voltage [v] figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics typical characteristics 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c b >>?? ?? >>? 1. v ds = 50v v 3 x o v h 7 h v w i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 0.5 1.0 1.5 2.0 2.5 v gs = 20v v gs = 10v b >>?? ?>>? >? j = 25 b] r ds(on) >
@ drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 b] b >>?? ?? >>? 1. v gs = 0v v 3 x o v h 7 h v w 25 b] i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 10203040506070 0 2 4 6 8 10 12 v ds = 400v v ds = 160v v ds = 640v * note : i d = 9.4a v gs , gate-source voltage [v] q g , total gate charge [nc]
q?v~zy??q?v?_ra]u??qcabaq HFP10N80 figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve typical characteristics (continued) t 2 t 1 p dm -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 b >>?? ?? >>? 1. v gs = 0 v 2. i d $ bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 4.7 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 25 50 75 100 125 150 0 2 4 6 8 10 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 0.64 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 p s dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v]
q?v~zy??q?v?_ra]u??qcabaq HFP10N80 fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_ra]u??qcabaq HFP10N80 fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_ra]u??qcabaq HFP10N80 package dimension 9.19 0.20 3 0.20 9.90 0.20 2.80 0.20 15.70 0.20 13.08 0.20 3.02 0.20 2.54typ 6.50 0.20 0.80 0.20 1.27 0.20 1.52 0.20 1.30 0.20 4.50 0.20 0.50 0.20 2.40 0.20 2.54typ { v t y y w g o h p g
q?v~zy??q?v?_ra]u??qcabaq HFP10N80 0.20 2.74 0.20 15.44 0.20 13.28 0.20 2.67 0.20 6.30 0.20 0.81 0.20 1.27 0.20 1.27 0.20 4.57 0.20 0.40 0.20 2.67 0.20 9.14 0.20 3 0.20 2.54typ 2.54typ { v t y y w g o i p g
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